OFT-3301 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – 3.0mm Round Phototransistor

3.0mm Round Phototransistor
OFT-33 Series
Typical Electrical / Optical Characteristics Curves:
Features:
10
10 ⁴
• Standard 3mm Package
8
• High Sensitivity
10 ³
6
10 ²
4
2
10 ¹
Ee=0mW/cm²
0
3.0
500 700 900 1100 1300
1.0
0
25
50
75
100
Wavelength (nm)
Ambient Temperature Ta ( )
Fig. 1 Spectral Sensitivity VS.
Peak Wavelength
Fig. 2 Collector Dark Current VS.
Ambient Temperature
1000
100
4
Ta=25
3
10
2
0.5 Square x2
2.54±0.1
2 Collector
1 Emitter
1.0
0.1
0.1 0.5 1
5 10
Ee (mW/cm² )
Fig. 3 Photo Current VS.
Irradiance
1
0
100
-75 -25
25
75
125
Ambient Temperature Ta ( )
Fig. 4 Collector Current VS.
Ambient Temperature
Maximum Ratings at Ta=25 C
Power Dissipation............................................................................................................................. 75mW
Collector-emitter voltage .............................................................................................................. 30V
Emitter-collector voltage ............................................................................................................... 5V
Operating Temperature Range ................................................................................................... -25 to +85 C
Storage Temperature Range ........................................................................................................ -40 to +100 C
Soldering Temperature Dip Soldering ..................................................................................... 260 C for 5 secs
Soldering Temperature Hand Soldering ................................................................................. 350 C for 3 secs
Electrical & Optical Characteristics at Ta=25 C
Ant Part No.
OFT-3301
Chip
Material Lens Colour
Collector-emitter Emitter-collector Collector-emitter
breakdown
breakdown
saturation
voltage (V)
voltage (V)
voltage (V)
Rise Fall
Time Time
µS µS
Collector
Dark
Current
(nA)
On State
Collector
Current (mA)
min. typ.
(Conditions:
Ee=0mW/cm2
IC=100 µA)
(Conditions:
Ee=0mW/cm2
IE=100 µA)
(Conditions:
Ee=1mW/cm2
IC=2mA)
(Conditions: (Conditions: (Conditions:
Vce=5V, Ic=1mA, Ee=0mW/cm2 Ee=1mW/cm2
RL=1000)
Vce=20V) Vce=5V)
Peak
Sensitivity
Wavelength
Silicon
Black
30
5
0.3
15 15
100
0.6 2.0
860
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