MX29LV033C Datasheet, PDF (1/57 Pages) List of Unclassifed Manufacturers – 32M-BIT COMSEQUAL SECTOR FLASH MEMORY

ADVANCED INFORMATION
MX29LV033C
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• 4,194,304 x 8 byte structure
• Sixty-four Equal Sectors with 64KB each
- Any combination of sectors can be erased with erase
suspend/resume function
• Eighteen Sector Groups
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotected function to allow code
changing
- Provides temporary sector group unprotected func-
tion for code changing in previously protected sector
groups
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
• Fully compatible with MX29LV033A device
PERFORMANCE
• High Performance
- Fast access time: 70/90ns
- Fast program time: 7us/byte, 36s/chip (typical)
- Fast erase time: 0.7s/sector, 35s/chip (typical)
• Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 10-year data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
• Support Command Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state
machine to read mode
• ACC input pin
- Provides accelerated program capability
PACKAGE
• 40-pin TSOP
GENERAL DESCRIPTION
The MX29LV033C is a 32-mega bit Flash memory orga-
nized as 4M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV033C is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV033C offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention, the
MX29LV033C has separate chip enable (CE#) and out-
put enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV033C uses a command register to manage this
functionality.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29LV033C uses a 2.7V to 3.6V VCC
P/N:PM1189
REV. 0.02, JUL. 21, 2005
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