MX29F1611 Datasheet, PDF (1/36 Pages) List of Unclassifed Manufacturers – 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

INDEX
PRELIMINARY
MX29F1611
FEATURES
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
• 5V ± 5% write, erase and read
• JEDEC-standard EEPROM commands
• Endurance: 10,000 cycles
• Fast access time: 100/120/150ns
• Fast pagemode access time: 50/60/70ns
• Page access depth: 16 bytes/8 words, page address
A0, A1, A2
• Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 150ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at
specified addresses
• Status Register feature for detection of program or
erase cycle completion
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 128 bytes/64
words per page
- Page programming time: 5ms typical
- Byte programming time: 39us in average
• Low power dissipation
- 80mA active current
- 100uA standby current
• CMOS inputs and outputs
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 lead SOP
GENERAL DESCRIPTION
The MX29F1611 is a 16-mega bit Pagemode Flash
memory organized as either 1M wordx16 or 2M bytex8.
The MX29F1611 includes 16-128KB(131,072 Bytes)
blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash
memories offer the most cost-effective and reliable read/
write non-volatile random access memory and fast page
mode access. The MX29F1611 is packaged 44-pin
SOP. It is designed to be reprogrammed and erased in-
system or in-standard EPROM programmers.
The standard MX29F1611 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the
MX29F1611 has separate chip enable CE, output enable
(OE), and write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F1611 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29F1611 does not require high input voltages for
programming. Five-volt-only commands determine the
operation of the device. Reading data out of the device
is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed to
optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29F1611 uses a 5V ± 5% VCC supply to perform the
Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N: PM0440
1
REV. 1.6, JUL. 16, 1998