LVS2100N Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel PowerJFET

®
April 2005
Preliminary
www.lovoltech.com
LVS2100N N-Channel PowerJFET^®
Product Summary
Typical Max
V_DS
R_DS(ON) @ 0 V_GS
11.5
24
V
14
mΩ
Pinouts
Features
• Device is fully on @ V_GS = 0V.
• Bidirectional blocking when off (no body diode)
Applications
• Notebook battery switch:
Each JFET replaces 2 P-Channel series MOSFETs
SO-8
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V_DSS
V_GS
V_DG
I_D
Parameter
Drain to Source voltage
Gate to Source voltage
Drain to Gate voltage
Drain Current
T_J
T_STG
P_D
Junction Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation
Conditions
Continuous, T_C = 25°C
Pulsed, 300µS
10 seconds, 1.6mm from case
T_A = 25°C, Note 1
T_A = 25°C, Note 2
Rating
24
–12
–28
11
50
–55 to 150
–65 to 150
260
2.5
1.3
Units
V
V
V
A
A
°C
°C
°C
W
W
Thermal Resistance
Symbol Resistance from:
Conditions
R_θJA
Junction to Ambient
Note 1
Note 2
R_θJC
Junction to Case
Note 1. Mounted on 1 in.², 2 oz copper on FR-4
Note 1. Mounted on 0.05 in.², 0.5 oz. copper on FR-4
Rating
50
96
25
Units
°C/W
°C/W
°C/W
©2005 Lovoltech Inc.
REV. 0.8.0 04/14/05