LED1200-35M32 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Stem type LED with high output powe

LED1200-35M32 Stem type LED with high output power
LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens
being designed for high output power uses. On forward bias, it emits a spectral band of
radiation, which peaks at 1200nm.
♦Features
1) High radiated intensity
2) High Reliability
♦Outer dimension [Unit:mm]
♦Specifications
1) Product Name
2) Type No.
3) Chip Spec.
(1) Material
(2) Peak Wavelength
4) Package
(1) Type
(2) Lens
(3) Cap
NIR LED Lamp
LED1200-35M32
InGaAs/InP
1200 nm
TO-18 stem
Spherical glass lens
Gold plated
♦Absolute Maximum Ratings
Item
Symbol Maximum Rated Value Unit Ambient Temperature
Power Dissipation
PD
120
mW
Ta = 25 °C
Forward Current
IF
100
mA
Ta = 25 °C
Pulse Forward Current
IFP
1000
mA
Ta = 25 °C
Reverse Voltage
VR
3
V
Ta = 25 °C
Operating Temperature
TOPR
-20 ~ +90
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature
TSOL
260
°C
‡Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.
‡Soldering condition : Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics
Item
Symbol Condition Minimum Typical Maximum Unit
Forward Voltage
VF
IF = 20 mA
0.8
1.3
V
Reverse Current
IR
VR = 3 V
10
uA
Total Radiated Power
PO
IF = 20 mA
0.8
1.8
mW
Peak Wavelength
λP
IF = 20 mA
1150
1200
1250
nm
Half Width
∆λ
IF = 20 mA
100
nm
Viewing Half Angle
θ 1/2 IF = 20 mA
±15
deg.
Rise Time
tr
IF = 20 mA
10
ns
Fall Time
tf
IF = 20 mA
10
ns
‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742