LD1010DA Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – High Performance N-Channel POWERJFET with PN Diode

PWRLITE LD1010DA
High Performance N-Channel POWERJFET^TM with PN Diode
Features
™ Superior gate charge x Rdson product (FOM)
™ Trench Power JFET with low threshold voltage Vth.
™ Device fully “ON” with Vgs = 0.7V
™ Optimum for “Low Side” Buck Converters
™ Excellent for high frequency dc/dc converters
™ Optimized for Secondary Rectification in isolated DC-DC
™ Low Rg and low Cds for high speed switching
Applications
™ DC-DC Converters
™ Synchronous Rectifiers
™ PC Motherboard Converters
™ Step-down power supplies
™ Brick Modules
™ VRM Modules
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
DPAK Lead-free Pin Assignments
D
G
S
Pin Definitions
Pin Number Pin Name Pin Function Description
1
Gate Gate. Transistor Gate
2
Drain Drain. Transistor Drain
3
Source Source. Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(V_DD= 6V_DC, IL=60A_PK, L=0.3mH, R_G=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
D
G
S
N – Channel Power JFET
with PN Diode
V_DS (V)
24V
Product Summary
Rdson (Ω)
0.0045
Symbol
V_DS
V_GS
V_GD
I_D
I_D
E_AS
T_J
T_STG
T
P_D
Ratings
24
-12
-28
50¹
100
220
-55 to 150°C
-65 to 150°C
260°C
80
I_D (A)
50¹
Units
V
V
V
A
A
mJ
°C
°C
°C
W
LD1010DA Rev 1.03 – 03-05