IRGP4640D Datasheet, PDF (1/12 Pages) List of Unclassifed Manufacturers – INSULATED GATEBIPOLARTRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

V_CES = 600V
I_C = 40A, T_C = 100°C
IRGP4640DPbF
IRGP4640D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
C
t_SC 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.60V @ I_C = 24A
G
E
n-channel
GC ^E
TO-247AC
IRGP4640DPbF
GC ^E
TO-247AD
IRGP4640D-EP
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features
Low V_CE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
G
Gate
C
Collector
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4640DPbF
IRGP4640D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4640DPbF
IRGP4640D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
e Pulse Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
600
V
65
40
72
96
A
65
40
96
±20
V
±30
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_{ST G}
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
250
W
125
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
R_JC (IGBT)
R_JC (Diode)
R_CS
R_JA
Parameter
f Junction-to-Case (IGBT)
f Junction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.60
1.62
–––
40
Units
°C/W
1
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January 8, 2013