GLT4160L04 Datasheet, PDF (1/22 Pages) List of Unclassifed Manufacturers – 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
Features :
∗ 4,194,304 words by 4 bits organization.
∗ Fast access time and cycle time
∗ Low power dissipation.
∗ Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden Refresh.
∗ 2,048 refresh cycles per 32ms.
∗ Available in 300 mil 26(24) SOJ and TSOPII.
∗ 3.3V±0.3V Vcc Power Supply voltage.
∗ All inputs and Outputs are LVTTL compatible.
∗ Extended Data-Out (EDO) Page access
cycle.
∗ Self-refresh Capability. (S-Version).
Description :
The GLT4160L04 is a high-performance
CMOS dynamic random access memory
containing 16,777,216 bits organized in a x4
configuration. The GLT4160L04 offers page
cycle access with Extended Data Output.
The GLT4160L04 has 11 row- and 11
column-addresses, and accepts 2048-cycle
refresh in 32 ms.
The GLT4160L04 provides EDO PAGE
MODE operation which allows for fast data
access within a row-address defined
boundary, up to 2048 x 4 bits with cycle
times as short as 18ns.
HIGH PERFORMANCE
Max. RAS Access Time, (t_RAC)
Max. Column Address Access Time, (t_AA)
Min. Extended Data Out Page Mode Cycle Time, (t_PC)
Min. Read/Write Cycle Time, (t_RC)
Max. CAS Access Time (t_CAC)
40
50
60
70
40 ns 50 ns 60 ns 70 ns
20 ns 25 ns 30 ns 35 ns
18 ns 20 ns 25 ns 30 ns
70 ns 84 ns 104 ns 124 ns
12 ns 13 ns 15 ns 20 ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.