FZ800R12KS4 Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – IGBT-Module

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
T_C = 80°C
T_C = 25 °C
t_P = 1 ms, T_C = 80°C
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
t_P = 1 ms
Grenzlastintegral der Diode
I²t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Vorläufige Daten
Preliminary data
V_CES
1200
V
I_C,nom.
800
A
I_C
1200
A
I_CRM
1600
A
P_tot
6,9
kW
V_GES
+/- 20V
V
I_F
800
A
I_FRM
1600
A
I²t
185.000
A²s
V_ISOL
2.500
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I_C = 800 A, V_GE = 15V, Tvj = 25°C
I_C = 800 A, V_GE = 15V, T_vj = 125°C
Gate-Schwellenspannunggate threshold voltage IC = 32 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
V_GE = -15V ... + 15V, V_CE = 600V
V_CE = 1200V, V_GE = 0V, T_vj = 25°C
V_CE = 1200V, V_GE = 0V, T_vj = 125°C
V_CE = 0V, V_GE = 20V, T_vj = 25°C
prepared by: R. Jörke
approved by: Jens Thurau
date of publication : 2000-06-14
revision: 1
1 (9)
min. typ. max.
V_{CE sat}
-
3,00
-
V
-
3,60
-
V
V_GE(th)
4,5
5,5
6,5
V
C_ies
-
52
-
nF
C_res
-
t.b.d.
-
nF
Q_G
-
8,4
-
µC
I_CES
-
t.b.d.
-
µA
-
t.b.d.
-
mA
I_GES
-
-
400
nA
FZ800R12KS4, preliminary.xls
15.06.00