FMM5805GJ-1 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – 17.7-19.7GHz Power Amplifier MMIC

FMM5805GJ-1
FEATURES
• High Output Power: P1dB = 31.0dBm(Typ.)
• High Gain: G1dB = 20.0dB(Typ.)
• High PAE: η_add = 27% (Typ.)
• Low In/Out VSWR
• Broad Band: 17.7 ~ 19.7GHz
• Impedance Matched Zin/Zout = 50Ω
17.7-19.7GHz Power Amplifier MMIC
DESCRIPTION
The FMM5805GJ-1 is a high-gain, high power, 3-stage MMIC amplifier
designed for operation in the 17.7-19.7GHz frequency range.
This amplifier has an input and output designed for use in 50Ω
systems.This device is well suited for point-to-point communication
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
DC Input Voltage
VDD
DC Input Voltage
VGG
Input Power
Pin
Storage Temperature
Tstg
Operating Case Temperature
Top
Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
10
-7
22
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
17.7 - 19.7
Output Power at 1 dB G.C.P.
P_1dB
29 31 -
Power Gain at 1 dB G.C.P.
G_1dB
18 20 25
Unit
GHz
dBm
dB
Gain Flatness
∆G
Drain Current at 1 dB G.C.P.
Iddrf
Gate Current at 1 dB G.C.P.
Power-Added Efficiency at 1dB G.C.P.
Iggrf
η_add
Input Return Loss
RLin
Output Return Loss
RLout
VDD = 6V
VGG = -5V
f= 17.7-19.7GHz
ZS = ZL = 50Ω
- 1.0 -
dB
- 800 950
mA
- -12 -15
mA
- 27 -
%
- -10 -
dB
-
-6
-
dB
G.C.P.: Gain Compression Point
Edition 1.1
September 2004
1