FM20L08 Datasheet, PDF (1/14 Pages) List of Unclassifed Manufacturers – 1Mbit Bytewide FRAM Memory - Extended Temp

Preliminary
FM20L08
1Mbit Bytewide FRAM Memory – Extended Temp.
Features
1Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx8
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process
SRAM Replacement
• JEDEC 128Kx8 SRAM pinout
• 60 ns Access Time, 350 ns Cycle Time
System Supervisor
• Low Voltage monitor drives external /LVL signal
• Write protects memory for low voltage condition
• Software programmable block write protect
Description
The FM20L08 is a 128K x 8 nonvolatile memory that
reads and writes like a standard SRAM. A
ferroelectric random access memory or FRAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and unlimited write endurance make
FRAM superior to other types of memory.
In-system operation of the FM20L08 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The FRAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM20L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in the form of an SRAM.
The FM20L08 includes a voltage monitor function
that monitors the power supply voltage. It asserts an
active-low signal that indicates the memory is write-
protected when V_DD drops below a critical threshold.
When the /LVL signal is low, the memory is
protected against an inadvertent access and data
corruption.
Superior to Battery-backed SRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
Low Power Operation
• 3.3V +10%, -5% Power Supply
• 22 mA Active Current
Industry Standard Configurations
• Extended Temperature -25° C to +85° C
• 32-pin “green” TSOP (-TG)
The FM20L08 also features software-controlled write
protection. The memory array is divided into 8
uniform blocks, each of which can be individually
write protected.
Device specifications are guaranteed over the
temperature range -25°C to +85°C.
Pin Configuration
A11
1
A9
2
A8
3
A13
4
WE
5
DNU
6
A15
7
VDD
8
LVL
9
A16
10
A14
11
A12
12
A7
13
A6
14
A5
15
A4
16
32
OE
31
A10
30
CE
29
DQ7
28
DQ6
27
DQ5
26
DQ4
25
DQ3
24
VSS
23
DQ2
22
DQ1
21
DQ0
20
A0
19
A1
18
A2
17
A3
Ordering Information
FM20L08-60-TG 60 ns access, 32-pin
“Green” TSOP
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.4
Oct. 2005
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, [phone]
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