FLM5964-8F Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – C-Band Internally Matched FET

FLM5964-8F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: η_add = 37% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 5.9 ~ 6.4GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM5964-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
42.8
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 3400 5200
mA
Transconductance
gm VDS = 5V, IDS = 2200mA - 3400 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO _{IGS = -170µA}
Output Power at 1dB G.C.P.
P1dB
-5.0 -
-
38.5 39.5 -
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB VDS =10V,
9.0 10.0 -
dB
Idsr
IDS = 0.65IDSS _(Typ.),
f = 5.9 ~ 6.4 GHz,
- 2200 2600
mA
η_{add ZS=ZL= 50 ohm}
- 37 -
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 6.4 GHz, ∆f = 10 MHz
IM3 2-Tone Test
-44 -46 -
dBc
Pout = 28.5dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 3.0 3.5
°C/W
Channel Temperature Rise
∆Tch _{10V x Idsr x Rth}
-
- 80
°C
CASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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