FLM3742-25F Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – C-BAND INTERNALLY MATCHED FET

FLM3742-25F
FEATURES
• High Output Power: P1dB = 44.5dBm (Typ.)
• High Gain: G1dB = 10.5dB (Typ.)
• High PAE: η_add = 41% (Typ.)
• Low IM3 = -46dBc@Po = 33.5dBm
• Broad Band: 3.7 ~ 4.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3742-25F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in
a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
93.7
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
IDSS
gm
Vp
VGSO
P1dB
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 6800mA
VDS = 5V, IDS = 600mA
IGS = -600µA
Min.
-
-
-1.0
-5.0
43.5
Limit
Typ. Max.
11.6 17.4
5800 ^-
-2.0 -3.5
-
-
44.5 -
Unit
A
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB VDS =10V,
9.5 10.5 -
dB
Idsr
IDS = 0.55 IDSS _(Typ.),
f = 3.7 ~ 4.2 GHz,
- 6200 7600
mA
η_{add ZS=ZL= 50 ohm}
-
41
-
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 4.2 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-44 -46 -
dBc
Pout = 33.5dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 1.4 1.6
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
-
- 100
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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