FLM1213-4F Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Ku-Band Internally Matched FET

FLM1213-4F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 6.5dB (Typ.)
• High PAE: η_add = 28% (Typ.)
• Low IM3 = -46dBc@Po = 25.5dBm
• Broad Band: 12.7 ~ 13.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM1213-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
25.0
W
Storage Temperature
Tstg
Channel Temperature
Tch
-65 to +175
°C
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
Transconductance
IDSS VDS = 5V, VGS = 0V
- 1700 2600
mA
gm VDS = 5V, IDS = 1100mA - 1700 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
VGSO
P1dB
IGS = -85µA
-5.0 -
-
35.5 36.0 -
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB VDS = 10V
5.5 6.5 -
dB
f = 12.7 ~ 13.2 GHz
Idsr _{IDS = 0.65 IDSS(Typ.)}
- 1100 1300
mA
η_add ZS = ZL = 50Ω
-
28
-
%
Gain Flatness
∆_G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 13.2GHz, ∆f = 10MHz
IM3 2-Tone Test
-44 -46 -
Pout = 25.5dBm S.C.L.
Rth _{Channel to Case}
- 5.0 6.0
dBc
°C/W
Channel Temperature Rise
CASE STYLE: IA
∆Tch _{10V x Idsr x Rth}
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.4
August 2004
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