FLL400IP-3 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – L-Band Medium & High Power GaAs FET

FLL400IP-3
L-Band Medium & High Power GaAs FET
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 43% (Typ.)
• Broad Frequency Range: 2300 to 2500 MHz.
• Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power S-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
107
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
+175
°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Unit
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
- 12 16
A
Transconductance
gm
V_DS = 5V, I_DS = 7.2A
- 6000 -
mS
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 720mA
Gate-Source Breakdown Voltage V_GSO I_GS = -720µA
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
P_1dB
G_1dB
I_DSR
η_add
V_DS = 12V
f = 2.5 GHz
I_DS = 2A
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
P_1dB
G_1dB
R_th
V_DS = 10V
f = 2.5 GHz
I_DS = 5A (Note 1)
Channel to Case
CASE STYLE: IP
Note 1: The device shall be measured at a constant VGS condition.
-1.0
-5
44.5
8.0
-
-
-
-
-
-2.0 -3.5
V
-
-
45.5 -
9.0 -
6.0 8.0
V
dBm
dB
A
43 -
%
44.5 -
dBm
9.0 -
dB
1.0 1.4
°C/W
G.C.P.: Gain Compression Point
Edition 1.5
October 2004
1