FLL1500IU-2C Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – L-Band High Power GaAs FET

FEATURES
• Push-Pull Configuration
• High Power Output: 150W (Typ.)
• High PAE: 48% (Typ.)
• Broad Frequency Range: 2100 to 2200 MHz.
• Suitable for class AB operation.
FLL1500IU-2C
L-Band High Power GaAs FET
DESCRIPTION
The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is well suited for use in W-CDMA and IMT 2000 base station
amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V_DS
V_GS
P_T
T_stg
Tc = 25°C
Channel Temperature
T_ch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 353 and -103.6 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
187.5
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Drain Current
I_DSS
V_DS = 5V, V_GS = 0V
- 16 -
Pinch-Off Voltage
V_p
V_DS = 5V, I_DS = 440mA -0.1 -0.3 -0.5
Gate-Source Breakdown Voltage V_GSO I_GS = -4.4mA
-5
-
-
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
P_out
GL
I_DSR
η_add
V_DS = 12V
f = 2.17 GHz
I_DS = 4.0A
Pin = 43.0dBm
50.8 51.8 -
11.0 12.0 -
- 23 30
- 48 -
Thermal Resistance
CASE STYLE: IU
R_th
Channel to Case
- _{0.55 0.8}
Unit
A
V
V
dBm
dB
A
%
°C/W
Edition 1.1
October 2004
1