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| FHT8050 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Frequency Power Amplifier Transistors | |||
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18
TEL:0758-2865088 2865091 FAX:0758-2849749
Low Frequency Power Amplifier Transistors
NPN Silicon (FHT8050)
FEATURES
· Low Frequency Power Amplifier
· Suitable for Driver Stage of Small Motor
· Complementary to FHTA8550 FHTA8550
MAXIMUM RATINGS(Ta=25 )
CHARACTERISTIC
Symbol
Rating
Unit
Collector-Base Voltage -
Collector-Emitter Voltage -
V CBO
40
Vdc
V CEO
25
Vdc
Emitter-Base Voltage -
V EBO
5.0
Vdc
Collector CurrentContinuous -
Ic
800
mAdc
Base Current
IB
160
mAdc
Collector Power Dissipation
PC
300
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55150
DEVICE MARKING
hFE(1) FHT8050O=7O(85 200),FHT8050Y=7Y(160 300),FHT8050G=7G(280~360)
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted
Characteristic
Symbol
25 )
Test Condition
Min TYP Max Unit
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
-
Collector-Emitter Breakdown Voltage
-
Emitter-Base Breakdown Voltage
-
DC Current Gain
Collector-Emitter Saturation Voltage
-
Base-Emitter Voltage -
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
VCB=30V,IE=0
VEB=5V,IC=0
IC=100 A
â â 0.1 A
â â 0.1 A
40 â â V
V(BR)CEO
IC=10mA
25 â â V
V(BR)EBO
IE=100 A
5 ââV
hFE (1) VCE=1V,IC=100mA 85
hFE (2) VCE=1V,IC=800mA 40
V CE(sat) IC=500mA,IB=50mA â
â 360
ââ
â 0.6 V
VBE
VCE=1V,IC=10mA
â 0.8 1.0 V
fT
VCE=5V,IC=10mA 100 120 â MHz
Cob VCB=10V,IE=0,f=1MHz â 13 30 pF
Page 0 of 3
*2005
2 * All Rights Reserved
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