FD800R33KF2 Datasheet, PDF (1/9 Pages) List of Unclassifed Manufacturers – IGBT-Module

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FD 800 R 33 KF2
Datenblatt
data sheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T_j = 25°C
T_j = -25°C
Kollektor-Dauergleichstrom
DC-collector current
T_C = 80°C
T_C = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t_P = 1 ms, T_C = 80°C
V_CES
3300
V
3300
V
I_C,nom.
800
A
I_C
1300
A
I_CRM
1600
A
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
P_tot
9,6
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V_GES
+/- 20V
V
Dauergleichstrom
DC forward current
I_F
800
A
Periodischer Spitzenstrom
repetitive peak forw. Current
t_P = 1 ms
I_FRM
1600
A
Grenzlastintegral der Diode
I2t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
I²t
222.200
A²s
Spitzenverlustleistung der Diode
maximum power dissipation diode
T_j = 125°C
P_RQM
800
kW
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V_ISOL
6.000
V
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q_PD ≤ 10 pC (acc. to IEC 1287)
V_ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
I_C = 800 A, V_GE = 15V, Tvj = 25°C
I_C = 800 A, V_GE = 15V, T_vj = 125°C
I_C = 80 mA, V_CE = V_GE, T_vj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V_GE = -15V ... + 15V, V_CE = 1800V
V_CE = 3300V, V_GE = 0V, T_vj = 25°C
V_CE = 3300V, V_GE = 0V, T_vj = 125°C
V_CE = 0V, V_GE = 20V, T_vj = 25°C
min. typ. max.
V_{CE sat}
-
3,40 4,25
V
-
4,30 5,00
V
V_GE(th)
4,2
5,1
6,0
V
C_ies
-
100
-
nF
C_res
-
5,4
-
nF
Q_G
-
15
-
µC
I_CES
-
0,1
8
mA
-
40
100
mA
I_GES
-
-
400
nA
prepared by: Jürgen Göttert
approved by: Chr. Lübke; 20.07.99
date of publication : 08.06.99
revision: 2
1 (9)
Datenblatt FD 800 R 33 KF21
20.07.99