FD0200YR Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – DIAC

FD0200YR
DIAC
Dimensions in mm.
DO-35
Glass Axial
Package
• Silicon bi-directional trigger device
intended for use in thyristor (SCR and
TRIAC) trigger circuits, energy saving
lighting circuits and other switching
functions.
3.60 ^{± 0.55}
54.4 ^{± 0.55}
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 250 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
BREAKOVER VOLTAGE ON-STATE CURRENT
32 V
2.0 Amps
SPECIAL FEATURES:
• Low breakover current.
• Excellent symmetry.
• Very low leakage current.
MARKING CODE
P1
Absolute Maximum Ratings, according to IEC publication No. 134
PARAMETER
CONDITIONS
P_tot
Total Power Dissipation
Ta = 65 ºC
I_TRM
Repetitive peak on-state current tp = 20 µs, f = 100 Hz
T_stg
Storage Temperature Range
T_j
Operating Junction Temperature
Min. Typ. Max. Unit
150 mW
2
A
-40
+125 ºC
-40
+125 ºC
Thermal Resistance
R _{th (j-a)}
R _{th (j-l)}
PARAMETER
Junction to Ambient
Junction to leads
CONDITIONS
Min. Typ. Max. Unit
400
ºC/W
150
ºC/W
Electrical Characteristics at Tamb = 25 ºC
VBO
V_BO+ - -V_BO-
∆V±
PARAMETER
Breakover Voltage *
Breakover Voltage Symmetry
Dynamic breakover voltage *
V_O
Output Voltage *
I_BO
Breakover Current *
tr
Rise Time *
IB
Leakage Current *
IP
Peak Current *
* Applicable to both forward and reverse directions.
** Connected in parallel with the devices.
CONDITIONS
Min. Typ. Max. Unit
IBO, C = 22nF ** (see Figure 1) 28
32 36
V
I_BO, C = 22nF ** (see Figure 1)
±3
V
∆I = ^[I_BO to I_F = 10 mA^]
5
V
(see Figure 1)
(see Figure 3)
5
V
C = 22 nF **
(see Figure 4)
50 µA
1.5
µs
V_B = 0.5 V_BO max
(see Figure 1)
10 µA
see Figure 3 _(Gate)
0.3
A
Feb - 03