EPA080A-70 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA080A-70
DATA SHEET
High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +25.5dBm TYPICAL OUTPUT POWER
• 7.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
44
19
20
4
D
S
S
G
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
Gain at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=2.5mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
All Dimensions In mils.
MIN
24.0
5.5
TYP
25.5
7.0
MAX
UNIT
dBm
dB
%
40
130 240 320 mA
160 260
mS
-1.0 -2.5 V
-10 -15
V
-6 -14
135^*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
8V
5V
Vgs
Gate-Source Voltage
-5V
-3V
Ids
Drain Current
Idss
185mA
Igsf
Forward Gate Current
40mA
7mA
Pin
Input Power
23dBm
@ 3dB Compression
Tch
Channel Temperature
175^oC
150 ^oC
Tstg
Storage Temperature
-65/175^oC
-65/150 ^oC
Pt
Total Power Dissipation
1.1W
0.9W
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com