EFC240B Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +31.0dBm TYPICAL OUTPUT POWER
960
• 8.5dB TYPICAL POWER GAIN AT 12GHz
• HIGH BVgd FOR 10V BIAS
50 156
• 0.3 X 2400 MICRON RECESSED
D
D
D
D
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
40
SG
S
G
S
G
S
G
S
LINEARITY AND RELIABILITY
• Idss SORTED IN 40mA PER BIN RANGE
95
120 50
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
f=12GHz
f=18GHz
29.0 31.0
31.0
dBm
G_1dB
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f=12GHz
f=18GHz
7.0 8.5
6.0
dB
PAE
Power Added Efficiency at 1dB compression
Vds=10V, Ids=50% Idss
f=12GHz
33
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
320 520 720 mA
Gm
Transconductance
Vds=3V, Vgs=0V
200 280
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-15 -20
V
BVgs
Rth
Source Breakdown Voltage Igs=2.4mA
Thermal Resistance (Au-Sn Eutectic Attach)
-10 -17
20
V
o_C/W
48
350
100
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
570mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
29dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
6.8 W
5.7 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com