DMBT9018 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DMBT9018
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
20
15
4
50
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o_C
o_C
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 20
Collector-Emitter Breakdown Voltage BVCEO 15
Emitter-Base Breakdown Volatge
BVEBO
4
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
DC Current Gain⁽¹⁾
hFE
28
Transition Frequency
fT
600
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
0.1
-
0.1
-
0.5
-
400
-
-
Unit
V
V
V
µA
µA
V
-
MHz
Test Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=12V
VEB=3V
IC=5mA, IB=0.5mA
IC=1mA, VCE=5V
IC=5mA, VCE=5V