DE150-101N09A Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – RF Power MOSFET

Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Q_g and R_g
High dv/dt
Nanosecond Switching
DE150-101N09A
RF Power MOSFET
Preliminary Data Sheet
V_DSS = 100 V
I_D25
= 9.0 A
R_DS(on) = 0.16 Ω
Symbol Test Conditions
Maximum Ratings
P_DHS
=
80W
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DHS
P_DAMB
T_J
T_JM
T_stg
T_L
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J = 25°C to 150°C
100
V
T_J = 25°C to 150°C; R_GS = 1 MΩ
100
V
Continuous
±20 V
Transient
±30 V
T_c = 25°C
9.0
A
T_c = 25°C, pulse width limited by T_JM
54
A
T_c = 25°C
14
A
T_c = 25°C
7.5 mJ
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C
Derate 4.4W/°C above 25°C
T_c = 25°C
5.5 V/ns
>200 V/ns
80
W ^GATE
3.5 W
DRAIN
-55…+150 °C
150 °C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150 °C
300 °C
2
g
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min.
typ. max.
V_GS = 0 V, I_D = 3 ma
100
V
V_DS = V_GS, I_D = 4 ma
2
3
4V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
25 µA
250 _µA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.16 Ω
V_DS = 15 V, I_D = 0.5I_D25, pulse test
4.6
8.0
S
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density