D2012 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Si NPN TRANSISTOR

YOUDA TRANSISTOR
D2012
Si NPN TRANSISTOR D2012
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BVCBO= 60V
*Collector current up to 3A
*High h_FE linearity
PIN CONFIGURATIONS
PIN
SYMBOL
1
Emitter
2
Collector
3
Base
ABSOLUTE MAXIMUM RATINGS (Tamb=25 )
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BVCBO
BVCEO
BVEBO
Collector Dissipation
Tcase=25
PCM
Tamb=25
Collector Current
DC
Pulse
I_CM
Icp
Base Current
IB
Junction Temperature
Tj
Storage Temperature
Tstg
VALUE
60
50
7
30
1.5
3
7
0.6
+150
-55 +150
UNIT
V
V
V
W
W
A
A
A
ELECTRICAL CHARACTERISTICS (Tamb=25 ,all voltage referenced to GND Unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ICBO
IEBO
h_FE1
h_FE2
VCE(sat)
VBE(sat)
f_T
Cob
VcB=50V, IE=0
VEB=5V, IC=0
VcE=5V, IC=20mA
VcE=5V, IC=0.5A
Ic=3A, IB=0.3A
Ic=2A, IB=0.2A
VcE=5V, IC=0.1A
VcB=10V,
IE=0,f=1MHz
100 nA
100 nA
30 200
100
400
0.3 0.5
V
1.0 2.0
V
5
MHz
80
pF
CLASSIFICATION OF h_FE
RANK
RANGE
Q
100 200
P
160 320
E
200 400
WuXi YouDa Electronics Co., Ltd
Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel: [phone] Fax: [phone]
Website: www.e-youda.com
SHENZHEN OFFICE Tel [phone] 13823533350 Fax [phone]
Ver 3.1
1 of 1
2004-9-20