CTA16 Datasheet, PDF (1/2 Pages) CIT Relay & Switch – CIT SWITCH

CTA/CTB16
16Amp - 400/600/800/1000V - TRIAC
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
- Dishwashers
- Washing Machines
A1
A2
G
TO-220AB Isolated
(CTA16)
A2
A1
A2
G
TO-220AB Non-Isolated
(CTB16)
A2
G
A1
# Suitable for General Purpose AC Switching
# Altgernistor/No Snubber Versions for
Inductive Loads
# Logic Level Available for Use with
Microcontrollers and Low Level Devices
# IGT Range 10-50 mA (Q1)
# V_DRM/V_RMM 400, 600, 800, 1000V
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G=2 x I_GT, tr<100ns, Tj = 125˚C
Peak Gate Current @ Tj = 125˚C
Average Gate Power Dissipation @ Tj = 125˚C
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
Tc = 100˚C
Tc = 85˚C
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
IGT MAX @ VD =12 V, RL = 30Ω ^{NOTE 1}
VGT MAX @ VD =12 V, RL = 30Ω
VGD MIN @ VD =VDRM, RL = 3.3kΩ
Tj = 125˚C
IH MAX @ IT = 500 mA ^{NOTE 2}
IL MAX @ IG = 1.2 IGT
IL MAX @ IG = 1.2 IGT
dv/dt MIN @ VD = 67%VDRM (gate open) ^{NOTE 2}
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 0.1 V/ms ^{NOTE 2}
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 10 V/ms ^{NOTE 2}
Tj = 125˚C
(di/dt)c MIN without Snubber ^{NOTE 2 & 4}
Tj = 125˚C
QI-II-III
QI-II-III
QI-II-III
QI-III
Q-II
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
SYMBOL
I_T(RMS)
I_TSM
I² t
di/dt
I_GM
P_G(AV)
Tstg
Tj
V_ISO
RATING
16A
160A
168A
144A²s
100A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V_RMS
SW
10mA
1.3V
0.2V
15mA
25mA
30mA
40V/µs
8.5A/ms
3.0A/ms
CW
35mA
1.3V
0.2V
35mA
50mA
60mA
500V/µs
BW
50mA
1.3V
0.2V
50mA
70mA
80mA
1000V/µs
8.5A/ms
14A/ms
STANDARD (4 Quadrants)
IGT MAX @ VD =12 V, RL = 30Ω ^{NOTE 1}
IGT MAX @ VD =12 V, RL = 30Ω ^{NOTE 1}
VGT MAX @ VD =12 V, RL = 30Ω
VGD MIN @ VD =VDRM, RL = 3.3kΩ
IH MAX @ IT = 500 mA ^{NOTE 2}
IL MAX @ IG = 1.2 IGT
IL MAX @ IG = 1.2 IGT
dv/dt MIN @ VD = 67%VDRM (gate open) ^{NOTE 2}
(dv/dt)c MIN @ (di/dt)c = 7.0 A/ms ^{NOTE 2}
Tj = 125˚C
QI-II-III
QIV
Q-All
Q-All
Tj = 125˚C
Tj = 125˚C
QI-III-IV
Q-II
C
B
25mA
50mA
50mA
100mA
1.3V
0.2V
25mA
50mA
40mA
50mA
80mA
100mA
200V/µs
400V/µs
5V/µs
10V/µs
ISO9001 C E R T I F I E D
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
4. Commutating dv/dt=50V.µsec (exponential to 200Vpk)
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