CMT10N10 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – POWER FIELD EFFECT TRANSISTOR

CMT10N10
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced MOSFET is designed to withstand high
!
energy in avalanche and commutation modes. The new
!
energy efficient design also offers a drain-to-source diode
with a fast recovery time. Designed for high voltage, high !
speed switching applications in power supplies, converters !
and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
Front View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT10N10N220
Package
TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Gate-to-Source Voltage － Continue
－ Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25Ω)
Thermal Resistance － Junction to Case
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
10
35
±20
±40
40
0.32
-55 to 150
69
3.13
100
260
Unit
A
V
V
W
W/℃
℃
mJ
℃/W
℃
2001/12/24 Preliminary Rev. 1
Champion Microelectronic Corporation
Page 1