CMM1331-KU Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 12.70 to 13.50 GHz 1.5 Watt Power Amplifier

Advanced Product Specifications
October 2003
(1 of 2)
Features
❏ 32.5 dBm (Typ.) Saturated Output Power
❏ 32.0 dB (Typ.) Linear Gain
❏ Fully Matched
❏ Unconditionally Stable
❏ Copper/Molybdenum Flange Package
for Optimum Thermal Dissipation
Applications
❏ Ku-Band VSAT Transmit Subsystems
CMM1331-KU
12.70 to 13.50 GHz
1.5 Watt Power Amplifier
Pin Functional Diagram
Vdd 1
GROUND 2
RF IN 3
GROUND 4
Vgg 5
10 Vdd
9 GROUND
8 RF OUT
7 GROUND
6 Vgg
Description
The CMM1331-KU is a four-stage pHEMT GaAs
MMIC power amplifier that is ideally suited for transmit
subsystems designed for Ku-Band VSAT applications. The
CMM1331-KU provides 32.0 dB linear gain and delivers
1.5 watts of output power at saturation operating from
12.70 to 13.50 GHz frequency.
The unconditional stability and internal matching
provides for reduction of external components making this
product a simple and low-cost solution. The package is
designed with a base material of gold-plated copper/molybde-
num composite that offers excellent thermal properties and
minimum mechanical stress.
Electrical Characteristics (T = +25°C, Vd = 7V, Idq = 770mA)
Parameter
Condition
Frequency Range
Saturated Output Power
Pin = 3.0 dBm
Saturated Output Power Variation Over operating frequency
Linear Gain
Linear Gain Variation
Over operating frequency
Input Reflection Coefficient
Output Reflection Coefficient
Gate Supply Voltage
Idq = 770 mA
Drain Current
At Saturation
Power Added Efficiency
Thermal Resistance
Channel to Backside
Min
12.70
32.0
29.0
-1.1
23.0
Typ
32.5
0.3
32.0
2.5
-10.0
-7.0
-0.9
940
27.0
Max
13.50
0.6
35.0
4.5
-0.7
1000
Units
GHz
dBm
dBm
dB
dB
dB
dB
Volts
mA
%
°C/W
Electrical Characteristics (T = -40°C to +70°C, Vd = 7V, Idq = 770mA)
Parameter
Saturated Power Output
Linear Gain Variation
Stability
Condition
Variation from room temperature value
Variation from room temperature value
Min
Typ
Max
-0.5
-2.5
3.5
Unconditionally Stable
Units
dBm
dB
—
Maximum Ratings (TA = -40°C to +70°C) Operation outside any of these limits can cause permanent damage.
Parameter
Drain Voltage (+Vdd)
Gate Voltage (Vgg)
Bias Current (Idq)
Gate Current (Ig)
Rating
8.5
-3.0
1000
5
Units
Volts
Volts
mA
mA
Parameter
RF Input Power (Pin)
Storage Temperature
Channel Temperature
Dissipated Power (Pdis)
3236 Scott Boulevard
Santa Clara, California 95054
Phone: [phone]
Rating
7.0
-50 to +150
175
7.3
Units
dBm
°C
°C
Watts
Fax: [phone]