CD13002 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL, HIGH VOLTAGE
FAST SWITCHING POWER TRANSISTOR
CD13002
TO-92
Plastic Package
ECB
Compact Fluorescent Lamps (CFLS)
ABSOLUTE MAXIMUM RATING (T_a =25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Peak
I_CM
Power Dissipation
P_D
Operating And Storage Junction
Temperature Range
T_j, T_stg
VALUE
600
400
9.0
1.0
1.5
1.0
- 55 to +150
UNIT
V
V
V
A
A
W
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=1mA, I_C=0
Collector Cut Off Current
Collector Cut Off Current
I_CBO
V_CB=600V, I_E = 0
I_CEO
V_CE=400V, I_B = 0
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
Collector Emitter Saturation Voltage
h_FE
V_{CE (sat)}
V_CE=5V, I_C=0.1A
V_CE=5V, I_C=400mA
I_C=100mA, I_B=50mA
I_C=230mA, I_B=50mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=100mA, I_B=50mA
Fall Time
t_f
I_C=0.11A
Storage Time
t_s
I_C=0.1A, I_B1= I_B2=0.05A
Transition Frequency
f_T
V_CE=10V, I_C=0.1A,f=1MHz
MARKING
CD
13002
MIN
600
400
9.0
15
5.0
0.05
0.12
0.82
0.07
4.0
TYP MAX UNIT
V
V
V
100 µA
50 µA
100 µA
23
20
0.11 V
0.24 V
0.88 V
0.4 µs
0.9 µs
MHz
CD13002Rev_1 210803E
Continental Device India Limited
Data Sheet
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