C945LT1 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT-23 Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors
C945LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.2 WT amb=25
Collector current
I_CM : 0.15 A
Collector-base voltage
V_(BR)CBO : 60 V
Operating and storage junction temperature range
T_JT _stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
otherwise specified
unless
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V(BR)CBO
Ic= 1 A IE=0
60
V(BR)CEO
Ic= 0.1mA IB=0
50
V(BR)EBO
Ic= 100 A IB=0
5
ICBO
VCB=60 V , IE=0
ICEO
VCB=45 V , IE=0
IEBO
VEB= 5V , IC=0
hFE(1)
VCE= 6V, IC= 1m A
130
hFE(2)
VCE= 6V, IC= 0.1mA
40
VCE(sat) IC=100 mA, IB= 10m A
VBE(sat) IC=100 mA, IB= 10m A
VBEF
IE= 310m A
Transition frequency
CLASSIFICATION OF h_FE(1)
fT
VCE=6V, IC= 10mA
f=30MHz
150
Unit : mm
TYP MAX UNIT
V
V
V
0.1
A
0.1
A
0.1
A
400
0.3
V
1
V
1.4
V
MHz