C2D20120 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Silicon Carbide Schottky Diode

C2D20120–Silicon Carbide Schottky Diode
Zero Recovery^® Rectifier
V_RRM = 1200 V
I_F = 20 A
Q_c =122 nC
Features
Package
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on V_F
Benefits
TO-247-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Part Number
C2D20120D
Package
TO-247-3
Marking
C2D20120
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
1200 V
V_RSM
Surge Peak Reverse Voltage
1200 V
V_DC
DC Blocking Voltage
I_F(AVG) Average Forward Current (Per Leg/Device)
I_F(PEAK) Peak Forward Current (Per Leg/Device)
1200
10^/20
22/44
25^/50
V
A
T_C=160˚C
T_C=125˚C
A T_C=125˚C, T_REP<1 mS, Duty=0.5
I_FRM
Repetitive Peak Forward Surge Current
50^*
A T_C=25˚C, t_P=8.3 ms, Half Sine Wave
I_FSM
Non-Repetitive Peak Forward Surge Current
250^*
A T_C=25˚C, t_P=10 µs, Pulse
P_tot
T_J , T_stg
Power Dissipation (Per Leg)
Operating Junction and Storage Temperature
312^*
104*
-55 to
+175
W
T_C=25˚C
T_C=125˚C
˚C
** _{Per Device,} * _{Per Leg}
Subject to change without notice.
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