BRF610 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number BRF610
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 12 GHz typ @ I_C = 10 mA
• Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
• High Gain
|S₂₁|² = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF610is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF610an excellent choice for battery applications. From 10
mA to greater than 20mA, f_t is nominally 10 GHz. Maximum
recommended continuous current is 20 mA. A broad range of
packages are offered including SOT-23, SOT-143, plastic and
ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated
dice.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
V_CBO
V_CEO
V_EBO
I_{C CONT}
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
9
7
1.5
20
200
-65 to 150
UNITS
V
V
V
mA
o_C
o_C
SYMBOL
f_t
|S ₂₁ | ²
PARAMETERS & CONDITIONS
V_CE =8V, I_C = 10 mA unless stated
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
UNIT
GHz
MIN.
TYP.
MAX.
12
18.1
12.8
P_{1d B}
Power output at 1dB compression:
f = 1.0 GHz
dBm
12
G_{1d B}
Gain at 1dB compression:
f = 1.0 GHz
dBm
15
NF
h_FE
I_CBO
I_EBO
Noise Figure: V_CE =8V, I_C = 2mA
Forward Current Transfer Ratio:
V_CE = 8V, I_C = 10 mA
f = 1.0 GHz
Z_S = 50Ω
f = 1MHz
Collector Cutoff Current : V_CB =8V
0.2
Emitter Cutoff Current : V_EB =1V
dB
50
µA
µA
1.6
100
250
1.0
C_CB
Collector Base Capacitance: V_CB = 8V
f = 1MHz
pF
0.11