BF622 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)

PLANETA
BF622
The Small-signal
NPN Silicon High Voltage
Medium-Power Transistor
DESCRIPTION
The BF622 is an NPN silicon epitaxial transistor designed for
application as a video output to drive color CRT, telephony, professional
communication equipment and other high voltage applications.
It has dynamic range and good current characteristic.
This high voltage transistor in 3-Pin mini power plastic package SOT89
offers superior quality and performance at low cost.
FEATURES
Ø Low Saturation Voltages
V = _CE(sat) 0.6 V
V = _BE(sat) 0.9 V
Ø High Breakdown Voltages
V = _(BR)CBO 250 V
V = _(BR)CEO 250 V
Ø Low Collector Current
I_C= 50 mA
Ø Complementary to BF623
2
1
2
3
1 – Base
2 – Collector
3 – Emitter
JEDEC
EIAJ
GOST
Weight:
SOT89
TO-243
SC-62
KT-47
0.055g
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C)
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Operating Junction Temperature Range
Storage Temperature Range
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_C
T_JMAX
T_OPR
T_STG
Value
250
250
5
50
100
1.0
150
-60 to +100
-65 to +150
Unit
V
V
V
mA
mA
W
°C
°C
°C
ORDERING INFORMATION
Device
BF622
BF622-T1
Marking
Package
DA
SOT-89
DA
SOT-89
Quantity
Packing Style
5 Kpcs / plastic
bags
1 Kpcs / Reel
In bulk
Embossed tape 12-mm wide 7''
dia. Pin 2 (Collector) towards the
windung. Perforation on the right.
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© August 2001 Rev 1
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