B15V140 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – MEDIUM POWER SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number B15V140
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 8 GHz typ @ I_C = 70 mA
• High Gain
|S₂₁|² = 15.6 dB @ 1.0 GHz
9.0 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' B15V140 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the B15V140
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
1.5
V
I_C
Collector Current (continuous)
120
mA
TI^C_J ^{M(1A) X}
Collector Current (instantaneous)
Junction Temperature
180
200
mA
o_C
T_STG
Storage Temperature
-65 to 150 ^oC
(1) Depends on package
SYMBOL
f_t
|S ₂₁ | ²
PARAMETERS & CONDITIONS
V_CE = 10V, I_C =70 mA, Class A, unless stated
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
UNIT
GHz
dB
dB
MIN.
TYP. MAX.
8.0
15.6
9.0
P_{1d B}
Power output at 1dB compression:
f = 1.0 GHz
dBm
27.0
I_C = 75 mA
NF
Noise Figure: V_CE =8V, I_C =20 mA
f = 1.0 GHz
dB
1.6
h_FE
Forward Current Transfer Ratio: V_CE = 8V, I_C =15 mA
30
100
300
I_CBO
Collector Cutoff Current : V_CB =10V
µA
0.4
C_CB
Collector Base Capacitance: V_CB =10V
f = 1MHz
pF
.75