B12V114 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Gain Bandwidth Product
ft = 10 GHz typ @ I_C = 25mA
• Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
• High Gain
| S | 2 = 16.9 dB @ 1.0 GHz
21
12.0 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V114 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
V_CBO
V_CEO
V_EBO
I_C
T_J ⁽¹⁾
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
V
12
V
1.5
V
60
mA
200
o_C
-65 to 150 ^oC
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
V_CE = 8V, I_C = 25 mA unless stated
UNIT
MIN.
TYP.
MAX.
f_t
|S ₂₁ | ²
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
GHz
dB
dB
10.0
16.9
12.0
P_{1d B}
Power output at 1dB compression:
f = 1.0 GHz
dBm
18.0
G_{1d B}
Gain at 1dB compression:
f = 1.0 GHz
dBm
15.0
NF
h_FE
I_CBO
I_EBO
C_CB
Noise Figure: V_CE = 8V, I_C = 10mA
Forward Current Transfer Ratio:
V_CE = 8V, I_C =25 mA
Collector Cutoff Current : V_CB = 8V
f = 1.0 GHz
dB
f = 1MHz
µA
Emitter Cutoff Current : V_EB = 1V
µA
Collector Base Capacitance: V_CB = 8V
f = 1MHz
pF
1.4
30
150
300
0.2
1.0
0.25