AD500-9 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Avalanche Photodiode NIR

AD500-9 TO52S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at λ 760 - 910 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
Active Area
Dark Current ¹⁾
(M = 100)
Total Capacitance ¹⁾
(M = 100)
Breakdown Voltage U_BR
(at I_D = 2 µA)
Temperature Coefficient of U_BR
Spectral Responsivity ¹⁾
(at 905 nm, M = 100)
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
“Excess Noise” factor
(M = 100)
“Excess Noise” index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
AD500-9 TO52S1
0.196 mm²
Ø 500 µm
max. 5 nA
typ. 0.5 - 1 nA
typ. 1.2 pF
120 … 300 V
typ. > 200 V
typ. 1.55 V/K
min. 55 A/W
typ. 60 A/W
typ. 0.5 GHz
typ. 550 ps
50 - 60
> 200
typ. 2.5
typ. 0.2
typ. 1 pA/Hz^1/2
typ. 2* 10^-14 W/Hz^1/2
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
Package (TO52S1):
CASE
ANODE
45°
4
3
1
∅ 2.54
∅ 5.4 ± 0.2
∅ 4.7 ± 0.1
∅ 3.0 ± 0.1
∅ 2.0 min.
CATHODE
∅ 0.45
Chip: AD500-9
diam. active area: 100 µm
1
3
4
view without
window cap
www.silicon-sensor.com
Version: 05-04-29
Specification before: SSO-AD-500-9-TO52-S1
www.pacific-sensor.com