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2N7000P Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2- MARCH 94
FEATURES
* 60 Volt VcEo
*R 0S(0.) = 5 â2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=250C
Pulsed Drain Currentâ-
Gate-Source Voltage
Power Dissipation at Tamb=250C
Operating and Storage Temperature
ââ
Range
-. â. â-..-...,, ...â â,.. . . .-
2N7000P
I
D
Gs
v
lJ&h!sJ
SYMBOL
VALUE
~
UNIT
âDS
â
ID
ââ+â
lDM
60
200
â
â500
ââ
v
mA
mA
âGS
Ptot
Ti:T~tg
i 40
â
-1
---â- 2A.
-55to +150 \
v
mW
~
âc
PARAMETER
Drain-Source
Voltage
Breakdown
Gate-Source Threshold Voltage
â-
â
Gate-Body Leakage
Zero Gate Voltege Drain Current
â- âââ.
â .ââ
On-State Drain Curren~t(~1)
ââ-.â
â.â .ââ
Static Drain-Source On-State
Voltage (1)
Static Drain-Source On-State
Resistance (1)
SYMBOL
BVDss
MIN.
60
âGS(th)
lGSS
lD~s
_ 0.8
ID(m)
q+f 75
âDS(on)
RDs& ~
MAX. UNIT CONDITIONS.
v
ID=l OIA, VGsOV
.â
3
v
lD=lmA, VD= VGs
10
nA-- vG-@ ââ 15V, vD~=ov
1
UA
VD~48V, VG~O
1
mA VDs48V, VG~OV, T=125°C(2)
â
mA VDSIOV, VGF4.5V
2.5
V - VGs.=10V,lD.500mA
0.4
v
5T
â; â- ;;~;;;$;%--â
1â
input Capacitance (2)
ââ. .âââ. ââ
__, _ AL-PâE.-.;
Common Source Output
Capacitance (2â) . â-â
c 0ss
1
~
I I 25
pF
VD-725V, VGs:OV, f= 1MHz
-4
âReve;se Transfer Capacitance
TurmOn Time (2)(3)
Turn-Off Time (2)(3)
(2) c,,,
â(on)
Voff)
5
pF
â --ââ
ââ âââ
10
ns \ VDD=15V, lD=500mA
~ Rg=25Q, RL=25Q
10
ns
I
) Measured under pulsed conditions. Width=300ps. Duty cycle <2% (2) Sample test.
1)Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator
3-13
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