10A030 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 3 Watts, 20 Volts, Class A Linear to 1000 MHz

10A030
3 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10A030 is a COMMON EMITTER transistor capable of providing 3
Watts of Class A, RF Output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25^oC
13 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
1.5 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150^oC
+ 200^oC
CASE OUTLINE
55FT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 ^OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 1.0 GHz
3.0
Ic = 440 mA
Vcc = 20 Volts
7.8
Vce = 20, Ic= 440 mA 2.5
Watts
0.5 Watts
8.5
dB
GHz
30:1
BVebo
BVces
BVceo
H _FE
Cob
θjc
Emitter to Base Breakdown
Ie = 3 mA
3.5
Collector to Emitter Breakdown Ic = 20 mA
50
Collector to Emitter Breakdown Ic = 20 mA
24
DC Current Gain
Vce=5V, Ic = 200mA
20
Output Capacitance
Vcb =28 V, f = 1 MHz
Thermal Resistance
Volts
Volts
Volts
120
7.3
pF
10
12.5 ^oC/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120