T15V8M16A Datasheet, PDF (9/12 Pages) List of Unclassifed Manufacturers – 512K X 16 LOW POWER CMOS STATIC RAM

tm TE
CH
WRITE CYCLE 3 ( UB , LB Controlled)
A dd re ss
UB / LB
CE
WE
tAS
tWC
tAW
tCW
tWP
Preliminary T15V8M16A
tWR
DOUT
DIN
High-Z
High-Z
tDW
tDH
High-Z
DO N 'T C AR E
UN D EF INE D
NOTES ( WRITE CYCLE ) :
1. A write occurs during the overlap of a low CE , a low WE . A write begins at the lateat transition
among CE goes low, WE going low. A write end at the earliest transition among CE going
high, WE going high. tW P is measured from the beginning of write to the end of write.
2. tCW is measured from the later of CE going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tW R is measured from the end of write to the address change.
Taiwan Memory Technology, Inc. reserves the right P. 9
to change products or specifications without notice.
Publication Date: JAN. 2000
Revision:0 .A