U632H64 Datasheet, PDF (7/15 Pages) List of Unclassifed Manufacturers – PowerStore 8K x 8 nvSRAM

Nonvolatile Memory Operations
Mode Selection
U632H64
E
W HSB
A12 - A0
(hex)
Mode
I/O
Power
Notes
H
X
H
X
Not Selected
Output High Z
Standby
L
H
H
X
Read SRAM
Output Data
Active
l
L
L
H
X
Write SRAM
Input Data
Active
L
H
H
0000
Read SRAM
Output Data
Active
k, l
1555
Read SRAM
Output Data
k, l
0AAA
Read SRAM
Output Data
k, l
1FFF
Read SRAM
Output Data
k, l
10F0
Read SRAM
Output Data
k, l
0F0F
Nonvolatile STORE Output High Z
k
L
H
H
0000
Read SRAM
Output Data
Active
k, l
1555
Read SRAM
Output Data
k, l
0AAA
Read SRAM
Output Data
k, l
1FFF
Read SRAM
Output Data
k, l
10F0
Read SRAM
Output Data
k, l
0F0E
Nonvolatile
Output High Z
k
RECALL
X
X
L
X
STORE/Inhibit
Output High Z
I_CC2/Standby
m
k: The six consecutive addresses must be in order listed (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a Store cycle or (0000, 1555, 0AAA, 1FFF,
10F0, 0F0E) for a RECALL cycle. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and dia-
grams for further details.
The following six-address sequence is used for testing purposes and should not be used: 0000, 1555, 0AAA, 1FFF, 10F0, 139C.
l: I/O state assumes that G ≤ V_IL. Activation of nonvolatile cycles does not depend on the state of G.
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)
completes, the part will go into standby mode inhibiting all operation until HSB rises.
No.
PowerStore Power Up RECALL/
Hardware Controlled STORE
Symbol
Alt.
IEC
Conditions
Min.
Max.
Unit
24 Power Up RECALL Duration^{n, e}
25 STORE Cycle Duration
26 HSB Low to Inhibit On^e
27 HSB High to Inhibit Off^e
28 External STORE Pulse Width^e
HSB Output Low Current^{e, o}
HSB Output High Current^{e, o}
Low Voltage Trigger Level
t_RESTORE
t_HLQX
t_d(H)S V_CC ^> 4.5 V
t_HLQZ
t_dis(H)S
t_HHQX
t_en(H)S
t_HLHX
t_w(H)S
I_HSBOL
HSB = V_OL
I_HSBOH
HSB = V_IL
V_SWITCH
650
μs
10
ms
1
μs
700
ns
250
ns
3
mA
5
60
μA
4.0
4.5
V
n: t_RESTORE starts from the time V_CC rises above V_SWITCH.
o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U632H64 to be ganged
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U632H64 HSB pins.
March 31, 2006
STK Control #ML0047
7
Rev 1.0