PDM41256 Datasheet, PDF (7/8 Pages) List of Unclassifed Manufacturers – 256K Static RAM 32K x 8-Bit

PDM41256
Low V_CC Data Retention Waveform
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2
3
Data Retention Electrical Characteristics (LA Version Only)
Symbol Parameter
Test Conditions
4
Min. Typ. Max. Unit
V_DR
I_CCDR
V_CC for Retention Data
Data Retention Current
CE ≥ V_CC – 0.2V
V_IN ≥ V_CC – 0.2V
or ≤ 0.2V
2
V_CC = 2V
—
—
—
V
95
500 µA
5
V_CC = 3V
—
350 750 µA
t_CDR
t_R(4)
Chip Deselect to Data Retention Time
Operation Recovery Time
0
—
—
ns
t_RC
—
6 ^—
ns
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, t_HZCE is less than t_LZCE.
4. This parameter is sampled.
7
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage
6. Vcc = 5V ± 5%.
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Rev. 2.0 - 7/17/96
3-39