CMM4000 Datasheet, PDF (6/7 Pages) List of Unclassifed Manufacturers – 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 08-May-06
CMM4000
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd=5V, I=115mA. Additionally there are three source resistors on chip, 13, 12 and 8.5 Ohms. One of these must be
bonded to ground.Typically 12 Ohms is bonded to ground to achieve performance as shown. Bonding to one of the other resistors
or any or all in parallel may allow additional performance adjustment.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD) (Thermal Resistance (Rth) is 82ºC/W)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth
MTTF Hours
FITs
deg Celsius
C/W
E+
E+
deg Celsius
C/W
E+
E+
deg Celsius
C/W
E+
E+
Bias Conditions: Vd=5.0V, Id=115 mA
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 6 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
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