UT51C164 Datasheet, PDF (5/26 Pages) List of Unclassifed Manufacturers – 256K X 16 BIT EDO DRAM


UTRON
Rev 1.4
UT51C164
256K X 16 BIT EDO DRAM
DC CHARACTERISTICS (T_A = 0℃ to 70ºC, VDD = 5.0 V ± 0.5 V, Vss = 0 V)
SYMBOL PARAMETER
IDD1
Operating Current,
V_DD Supply
IDD2
Standby Current
(TTL Input)
IDD3 ^{RAS Only Refresh}
Current
IDD4
EDO Page
Current
Mode
IDD5 CBR Refresh Current
SPEED
(t_RAC)
-35
-40
-50
-60
-
-35
-40
-50
-60
-35
-40
-50
-60
-35
-40
-50
-60
IDD6
Standby Current
(CMOS Input)
-
V_DD Power Supply
-
ILI Input Leakage Current
-
ILO
Output
Current
Leakage
-
VIL Input Low Voltage
-
VIH Input High Voltage
-
VOL Output Low Voltage
-
VOH Output High Voltage
-
UT51C164
Min
Max
-
190
-
180
-
170
-
160
-
3
-
190
-
180
-
170
-
160
-
220
-
200
-
190
-
180
-
190
-
180
-
170
-
160
-
2
4.5
5.5
-10
10
-10
10
-1
0.8
2.4
VDD +1
-
0.4
2.4
-
UNIT TEST CONDITION
mA t_RC = t_RC (min.)
mA ^{RAS = UCAS = LCAS}
=VIH
mA t_RC = t_RC (min.)
mA t_PC = t_PC (min.)
mA t_RC = t_RC (min.)
RAS ^{≧ V}DD^-0.2V
mA _CAS ≧ V_DD-0.2V
All other inputs≧ V_SS
V
uA V_SS≦ V_IN ≦V_DD
uA
V_SS≦ VOUT ≦V_DD
RAS ⁼ CAS ^{= V}IH
V
V
V I_OI = 2mA
V I_OH = 2mA
Notes: IDD1, IDD3, IDD4, IDD5 are dependent on output loading and cycle rates. Specified values are obtained with the output
open. IDD is specified as an average current. In IDD1, IDD3, and IDD5 address can be changed maximum once while
RAS =VIL. In IDD4, address can be changed maximum once within one EDO page cycle time, tPC.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: [phone] FAX: [phone]
5
P90005