GS74108TP-10 Datasheet, PDF (5/12 Pages) List of Unclassifed Manufacturers – 512K x 8 4Mb Asynchronous SRAM

GS74108TP/J
Power Supply Currents
Parameter Symbol Test Conditions
0 to 70°C
-40 to 85°C
8ns 10ns 12ns 15ns 10ns 12ns 15ns
Operating
Supply
IDD
Current
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
150mA 125mA 110mA 90mA 135mA 120mA 100mA
CE ≥ VIH
Standby
Current
ISB1
All other inputs
≥ VIH or ≤VIL
70mA 65mA 60mA 55mA 75mA 70mA 65mA
Min. cycle time
Standby
Current
CE ≥ VDD - 0.2V
ISB2
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
30mA
40mA
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
VIH=2.4V
VIL=0.4V
tr=1V/ns
tf=1V/ns
Input reference level
1.4V
Output reference level
1.4V
Output load
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
Output Load 1
DQ
50Ω 30pF¹
VT=1.4V
Output Load 2
3.3V
DQ
589Ω
5pF^{1 434Ω}
Rev: 1.06 7/2000
5/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.