GLT5640AL16 Datasheet, PDF (5/72 Pages) List of Unclassifed Manufacturers – 4M X 16 CMOS Synchronous Dynamic RAM

G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Supply Voltage
VDD
with respect to VSS
-0.5 to 4.6
V
Supply Voltage for Output
VDDQ
with respect to VSSQ
-0.5 to 4.6
V
Input Voltage
VI
with respect to VSS
-0.5 to VDD+0.5
V
Output Voltage
VO
with respect to VSSQ
-0.5 to VDDQ+0.5
V
Short circuit output current
IO
50
mA
Power dissipation
PD
Ta = 25 °C
1
W
Operating temperature
TOPT
0 to 70
°C
Storage temperature
TSTG
-65 to 150
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be
operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Recommended Operating Conditions (Ta = 0 ~ 70 °C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Min.
Typ.
Max.
Supply Voltage
VDD
3.0
3.3
3.6
V
Supply Voltage for DQ
VDDQ
3.0
3.3
3.6
V
Ground
VSS
0
0
0
V
Ground for DQ
VSSQ
0
0
0
V
High Level Input Voltage (all inputs)
VIH
2.0
VDD + 0.3
V
Low Level Input Voltage (all inputs)
VIL
-0.3
0.8
V
Note :
1.All voltages are referenced to Vss = 0V.
2.VIH (max) is acceptable 5.6V AC pulse width with ≤ 3ns of duration.
3.VIL (min) is acceptable -2.0V AC pulse width with ≤ 3ns of duration.
Pin Capacitance (Ta = 0 ~ 70°C, V_DD = V_DDQ = 3.3±0.3V , V_SS = V_SSQ = 0V, unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Input Capacitance, address & control pin
CIN
2.5
3.8
pF
Input Capacitance, CLK pin
CCLK
2.5
3.5
pF
Data input / output capacitance
CI/O
4.0
6.5
pF
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : [e-mail]
TEL : [phone]
-5-