GLT44108 Datasheet, PDF (5/16 Pages) List of Unclassifed Manufacturers – 512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE

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GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
AC Characteristics (0^°C≤T_A≤70^°C,See note 1,2)
Test condition:V_CC=5.0V±10%, V_IH/V_IL=2.4V/0.8V,V_OH/V_OL=2.0V/0.8V
Parameter
40 ns
50 ns
Symbol MIN. MAX. MIN. MAX.
Read/Write Cycle Time
tRC
75
-
90
-
Read Midify Write Cycle Time
tRWC
120
-
140
-
Access Time from RAS
tRAC
-
40
-
50
Access Time from CAS
tCAC
-
12
-
13
Access Time from Column Address
tAA
-
20
-
25
CAS to Output in Low-Z
tCLZ
0
-
0
-
Output Buffer Turn-off Delay from CAS ^tOFF
0
8
0
10
Transition Time(Rise and Fall)
RAS Precharge Time
tT
3
50
3
50
tRP
25
-
30
-
RAS Pulse Width
tRAS
40 10000 50 10000
RAS Hold Time
tRSH
12
-
13
-
CAS Hold Time
tCSH
40
-
50
-
CAS Pulse Width
tCAS
12 10000 13 10000
RAS to CAS Delay Time
tRCD
16
30
18
37
RAS to Column Address Delay Time
tRAD
11
22
13
25
CAS to RAS Precharge Time
tCRP
5
-
5
-
Row Address Setup Time
tASR
Row Address Hold Time
tRAH
Column Address Setup Time
tASC
Column Address Hold Time
tCAH
Column Address Hold Time Referenced tAR
0
-
0
-
6
-
8
-
0
-
0
-
6
-
8
-
30
-
40
-
to RAS
Column Address Lead Time Referenced tRAL
20
-
25
-
to RAS
Read Command Setup Time
tRCS
Read Command Hold Time Referenced tRRH
0
-
0
-
0
-
0
-
to RAS
Read Command Hold Time Referenced tRCH
0
-
0
-
to CAS
WE Hold Time Referenced to CAS
tWCH
Write Command Hold Time Referenced tWCR
6
-
30
-
7
-
40
-
to RAS
60 ns
MIN. MAX. Unit
110
-
ns
160
-
ns
-
60
ns
-
15
ns
-
30
ns
0
-
ns
0
13
ns
3
50
ns
40
-
ns
60 10000 ns
15
-
ns
60
-
ns
15 10000 ns
20
45
ns
15
30
ns
5
-
ns
0
-
ns
10
-
ns
0
-
ns
10
-
ns
45
-
ns
30
-
ns
0
-
ns
0
-
ns
0
-
ns
10
-
ns
45
-
ns
Notes
3,4
3,4
3,4
3
7
2
4
4
8
9
9
10
5
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