BS616LV1623 Datasheet, PDF (5/10 Pages) List of Unclassifed Manufacturers – Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

BSI
„ DATA RETENTION CHARACTERISTICS ( TA = -40^oC to +85^oC )
SYMBOL
PARAMETER
VDR
Vcc for Data Retention
(3)
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
TEST CONDITIONS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or
LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
See Retention Waveform
BS616LV1623
MIN. TYP. ⁽¹⁾ MAX.
1.5
--
--
UNITS
V
--
1.5
5
uA
0
--
--
ns
TRC ⁽²⁾
--
--
ns
1. Vcc = 1.5V, T_A = + 25^OC
2. t_RC = Read Cycle Time
3. IccDR(Max.) is 2.5uA at TA=70^OC.
„ LOW V_CC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≧ 1.5V
CE1 ≧ Vcc - 0.2V
Vcc
tR
VIH
„ LOW V_CC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR ≧ 1.5V
CE2 ≦ 0.2V
Vcc
tR
VIL
R0201-BS616LV1623
5
Revision 1.1
Jan. 2004