VP0808B Datasheet, PDF (4/4 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement-Mode MOSFET Transistors

VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
Threshold Region
–10
V_DS = –5 V
–1
T_J = 150_C
125_C
–0.1
25_C
–55_C
200
V_GS = 0 V
f = 1 MHz
160
Capacitance
120
80
C_iss
C_oss
40
C_rss
–0.01
–1.0
–1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –4.5
V_GS – Gate-to-Source Voltage (V)
0
0
–10
–20
–30
–40
–50
V_DS – Drain-to-Source Voltage (V)
–15.0
–12.5
Gate Charge
I_D = –0.5 A
–10.0
–7.5
V_DS = –50 V
–80 V
Drive Resistance Effects on Switching
100
t_r
t_f
t_d(off)
10
t_d(on)
–5.0
–2.5
0
0
100
200
300
400
500
Q_g – Total Gate Charge (pC)
V_DD = –25 V
R_L = 50 W
V_GS = 0 to –10 V
I_D = –500 mA
1
10
20
50
100
R_G – Gate Resistance (W)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
Single Pulse
0.01
0.1
1
4
10
100
t₁ – Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 156_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
1K
10 K
Siliconix
P-37655—Rev. B, 25-Jul-94