SI4133G-X2 Datasheet, PDF (4/32 Pages) List of Unclassifed Manufacturers – DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS

Si4133G-X2
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol Test Condition
Min
Typ
Max Unit
Ambient Temperature
T_A
–20
25
85
°C
Supply Voltage
V_DD
2.7
3.0
3.6
V
Supply Voltages Difference
V_∆
(V_DDR – V_DDD),
–0.3
—
0.3
V
(V_DDI – V_DDD)
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings^1,2
Parameter
Symbol
Value
Unit
DC Supply Voltage
Input Current³
Input Voltage³
Storage Temperature Range
V_DD
–0.5 to 4.0
V
I_IN
±10
mA
V_IN
-0.3 to V_DD+0.3
V
T_STG
–55 to 150
o_C
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.
4
Rev. 0.9