GS71108ATP_06 Datasheet, PDF (4/16 Pages) List of Unclassifed Manufacturers – 128K x 8 1Mb Asynchronous SRAM

GS71108ATP/J/SJ/U
Capacitance
Parameter
Symbol
Test Condition
Input Capacitance
CIN
Output Capacitance
COUT
VIN = 0 V
VOUT = 0 V
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
IIL
ILO
VOH
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4 mA
ILO = +4 mA
Max
5
7
Min
–1 uA
–1 uA
2.4
—
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
IDD
Current
Standby
Current
ISB1
Standby
Current
ISB2
Test Conditions
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
CE ≥ VDD – 0.2 V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
0 to 70°C
7 ns 8 ns 10 ns
140 mA 120 mA 95 mA
25 mA 20 mA 20 mA
2 mA
12 ns 7 ns
–40 to 85°C
8 ns 10 ns 12 ns
80 mA 145 mA 125 mA 100 mA 85 mA
15 mA 30 mA 25 mA 25 mA 20 mA
5 mA
Rev: 1.08 6/2006
4/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology