TN2010T Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement-Mode MOSFET Transistor

TN2010T
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
0.5
4V
V_GS = 10 V
0.4
3.4 V
3.2 V
0.3
3.0 V
0.2
2.8 V
2.6 V
0.1
2.4 V
2.2 V
0
2.0 V
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
16
Transfer Characteristics
0.5
T_C = –55_C
0.4
25_C
0.3
125_C
0.2
0.1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
100
12
V_GS = 4.5 V
8
V_GS = 10 V
4
0
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35
I_D – Drain Current (A)
Gate Charge
20
16
V_DS = 100 V
I_D = 100 mA
12
8
4
80
60
C_iss
40
20
C_oss
C_rss
0
0
5
10
15
20
25
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
2.0
V_GS = 10 V
I_D = 100 mA
1.5
V_GS = 4.5 V
I_D = 50 mA
1.0
0
0 500 1000 1500 2000 2500 3000 3500 4000
Q_g – Total Gate Charge (pC)
Siliconix
S-52426—Rev. C, 14-Apr-97
0.5
–50 –25 0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
3